Brandi Klingerman | January 1, 2019
Ferroelectric materials have the potential to improve a number of characteristics of electronic devices, including memory and power efficiency. However, these materials are difficult to predict and, therefore, to effectively use. To better understand ferroelectric dynamics and variability, Notre Dame researchers have developed a simulation framework that predicts the dynamic response of a ferroelectric and enables improved assessment of the applications.
Cristobal Alessandri and Pratyush Pandey, graduate students of electrical engineering at the University of Notre Dame, will present their research on ferroelectrics at the International Electron Devices Meeting (IEDM). The event is described as “the world’s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling,” and aims to showcase the latest research advancements.
“Being able to present our research at the IEDM is an incredible opportunity,” said Pandey. “This event brings together the best of both industry and academia, which gives us a chance to disseminate our work farther than would have ever been possible without the platform of this conference.”
For their research, Alessandri and Pandey utilized the Notre Dame Nanofabrication Facility to develop a process for creating ferroelectric devices. Their first insights into the dynamic switching in these devices were published last month in IEEE Electron Device Letters. Then the graduate students experimentally validated a physics-based model to predict the ferroelectric’s behavior for arbitrary input waveforms. By doing so, Alessandri and Pandey are now able to make predictions regarding the variability, scaling, and memory applications of the ferroelectric material, which make up the presentation at IEDM.
Read more here.